Thermally induced diffusion in GaInNAs/GaAs and GaInAs/GaAs quantum wells grown by solid source molecular beam epitaxy
- 1. School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue (Singapore)
- 2. School of Electrical and Electronic Engineering, Nanyang Technological University, Block S1, 50 Nanyang Avenue, Singapore and Singapore-Massachusetts Institute of Technology (MIT) Alliance, Nanyang Technological University (Singapore)
Description
The effects of the thermal annealing induced diffusion on the photoluminescence (PL) of a GaAs/GaInAs/GaAs/GaInNAs/GaAs quantum well (QW) structure grown by solid source molecular beam epitaxy are studied. The PL experimental results in conjunction with the numerical quantum-mechanical modeling that predicts the changes in the QW confining potential with group-III atomic diffusion, have been used to obtain the values for diffusion coefficient. The activation energies of GaInAs/GaAs QW (ED,GIA) were found to be between 0.49 to 0.51 eV, while that of GaInNAs/GaAs QW (ED,GINA) showed comparable values of between 0.6 to a 0.67 eV, as annealing time increases from 10 to 30 s. The ED,GIA and ED,GINA values are attributed to the same interstitial diffusion mechanism
Additional details
Identifiers
- DOI
- 10.1063/1.1825632;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 97
- Journal Issue
- 1
- Journal Page Range
- p. 013506-013506.8
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 36102863
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ACTIVATION ENERGY; ANNEALING; CRYSTAL GROWTH; GALLIUM ARSENIDES; INDIUM ARSENIDES; INTERSTITIALS; MILLI EV RANGE; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; QUANTUM MECHANICS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SIMULATION; THERMAL DIFFUSION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL DEFECTS; CRYSTAL GROWTH METHODS; CRYSTAL STRUCTURE; DIFFUSION; EMISSION; ENERGY; ENERGY RANGE; EPITAXY; GALLIUM COMPOUNDS; HEAT TREATMENTS; INDIUM COMPOUNDS; LUMINESCENCE; MATERIALS; MECHANICS; NANOSTRUCTURES; PHOTON EMISSION; PNICTIDES; POINT DEFECTS
Optional Information
- Notes
- (c) 2005 American Institute of Physics