Characterization of the anomalous luminescence properties from self-ordered porous anodic alumina with oxalic acid electrolytes
Creators
- 1. Group of Abel and Lie Operations In Sciences and Quantum Electro-optical Science and Technology Laboratory (GALOIS-Quest-Lab), Institute of Electro-Optical Engineering, Chang Gung University, Kwei-Shan, Tao-Yuan 333, Taiwan (China)
- 2. Department of Digital Technology Design and Graduate School of Toy and Game Design, National Taipei University of Education, Taipei 106, Taiwan (China)
- 3. Department of Bio-lndustrial Mechatronics Engineering, National Taiwan University, Taipei 106, Taiwan (China)
Description
The pore height and diameter of the nanoscale structure of porous anodic alumina (PAA) film produced by the anodization technique are controllable. The structures can be applied for the fabrication of visible spectral range optical devices. In this study we characterized the luminescence properties of self-ordered PAA films evaporated onto silicon substrates. Anomalous luminescence properties produced by carrier confinement were observed in PAA films fabricated with the introduction of oxalic acid electrolytes during the anodization process. The recombination mechanisms were characterized by measuring the temperature-dependent photoluminescence (PL) spectra. The PL spectra of PAA films show an asymmetrical luminescence profile in the blue emission region. The Gaussian function divides these into two subbands. The subbands originate from two different kinds of oxygen-deficient defect centers, namely, F+ (oxygen vacancy with only one electron) and F (oxygen vacancy with two electrons) centers. The F centers are densest at the surface but show a gradual decrease with an increase in the pore wall depth and electrolyte concentration. However, the reverse trend is observed for the F+ centers. In strong contrast to the commonly expected trend of a uniform reduction in non-radiative recombination with decreasing lattice temperature, we observed an anomalous low-temperature PL growth and decline between the F and F+ centers. Theoretical models corroborate the anomalous temperature behavior. All the calculations are in agreement with the experimental observations.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.tsf.2009.09.079Additional details
Identifiers
- DOI
- 10.1016/j.tsf.2009.09.079;
- PII
- S0040-6090(09)01541-7;
Publishing Information
- Journal Title
- Thin Solid Films
- Journal Volume
- 518
- Journal Issue
- 5
- Journal Page Range
- p. 1439-1442
- ISSN
- 0040-6090
- CODEN
- THSFAP
Conference
- Title
- 36. international conference on metallurgical coatings and thin films
- Acronym
- 2009 ICMCTF
- Dates
- 27 Apr - 1 May 2009
- Place
- San Diego, CA (United States)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 42058078
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM OXIDES; ANODIZATION; ELECTROLYTES; F CENTERS; FABRICATION; GAUSS FUNCTION; NANOSTRUCTURES; OXALIC ACID; PHOTOLUMINESCENCE; POROUS MATERIALS; RECOMBINATION; SILICON; SPECTRA; SURFACES; TEMPERATURE DEPENDENCE; THIN FILMS
- Descriptors DEC
- ALUMINIUM COMPOUNDS; CARBOXYLIC ACIDS; CHALCOGENIDES; CHEMICAL COATING; COLOR CENTERS; CORROSION PROTECTION; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DEPOSITION; DICARBOXYLIC ACIDS; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELEMENTS; EMISSION; FILMS; FUNCTIONS; LUMINESCENCE; LYSIS; MATERIALS; ORGANIC ACIDS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; POINT DEFECTS; SEMIMETALS; SURFACE COATING; VACANCIES
Optional Information
- Copyright
- Copyright (c) 2009 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.