Concentration profile of the shallow acceptor impurities in the crystals Ge-Si, raised by modernized Bridgman method

In Pfann approximation met the challenge of impurity distribution of Al, Ga and In in the GeSi crystals, raised by the modernized Bridgman method with the usage of germanium primer and feeding shank of the silicon. The essential influence of the dependence of coefficient of impurity segregation from the crystal composition and changing of the capacity of the melt, connected with its nourishment on the concentration profile of impurities along the axes of crystallization of alloy was shown. (author)