Published November 1999
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The study of effectiveness of electron stimulated processes during oxygen adsorption on ordered and defect (111) and (100) silicon surfaces
- 1. Uzbekistan Academy of Sciences, Institute of Electronics, Tashkent (Uzbekistan)
Description
no abstract available
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31011618.pdf
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Additional details
Additional titles
- Original title (Russian)
- Изучение эффективности электронно-стимулированных процессов при адсорбции кислорода на упорядоченных и дефектных поверхностях (111) и (100) в кремнии
Publishing Information
- Imprint Title
- Book of abstracts of the second Uzbekistan physical electronics conference
- Imprint Pagination
- 180 p.
- Journal Page Range
- p. 112
- Report number
- INIS-UZ--066
Conference
- Title
- 2. Uzbekistan physical electronics conference
- Dates
- 3-5 Nov 1999
- Place
- Tashkent (Uzbekistan)
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 31011618
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- ADSORPTION; DESORPTION; ELECTRON BEAMS; ELECTRON DIFFRACTION; EV RANGE; OXYGEN; SILICON; TOTAL CROSS SECTIONS
- Descriptors DEC
- BEAMS; COHERENT SCATTERING; CROSS SECTIONS; DIFFRACTION; ELEMENTS; ENERGY RANGE; LEPTON BEAMS; NONMETALS; PARTICLE BEAMS; SCATTERING; SEMIMETALS; SORPTION