Published February 27, 2013 | Version v1
Journal article

Electronic structure of α-SrB4O7: experiment and theory

  • 1. Laboratory of Optical Materials and Structures, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation)
  • 2. Laboratory of Physical Bases of Integrated Microelectronics, Institute of Semiconductor Physics, SB RAS, Novosibirsk 90, 630090 (Russian Federation)
  • 3. Laboratory of Crystal Physics, Institute of Physics, SB RAS, Akademgorodok, Krasnoyarsk 36, 660036 (Russian Federation)
  • 4. Siberian Federal University, Svobodny 79, Krasnoyarsk 41, 660041 (Russian Federation)

Description

The investigation of valence band structure and electronic parameters of constituent element core levels of α-SrB4O7 has been carried out with x-ray photoemission spectroscopy. Optical-quality crystal α-SrB4O7 has been grown by the Czochralski method. Detailed photoemission spectra of the element core levels have been recorded from the powder sample under excitation by nonmonochromatic Al Kα radiation (1486.6 eV). The band structure of α-SrB4O7 has been calculated by ab initio methods and compared to XPS measurements. It has been found that the band structure of α-SrB4O7 is weakly dependent on the Sr-related states. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/25/8/085503

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
25
Journal Issue
8
Journal Page Range
[6 p.]
ISSN
0953-8984
CODEN
JCOMEL