Published January 1988
| Version v1
Journal article
Peculiarities of pulsed photon annealing of indium antimonide
Description
A study was made on the structure and morphology of indium antimonide surface, subjected to ion implantation and annealing by incoherent light pulse, emitted by xenon lamp. It was established that transition from local fusion to uniform one of indium antimonide surface took place at ∼17J/cm2 density of luminous energy. Fusion depth was equal to approximately 20 nm
Additional details
Additional titles
- Original title (Russian)
- Особенности импульсного фотонного отжига антимонида индия
Publishing Information
- Journal Title
- Fiz. Khim. Obrab. Mater.
- Journal Issue
- no.1
- Series
- Fiz. Khim. Obrab. Mater.
- ISSN
- 0015-3214
- CODEN
- FKOMA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 19104239
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; ANTIMONIDES; INDIUM ALLOYS; ION IMPLANTATION; KEV RANGE 10-100; MAGNESIUM IONS; MELTING; MICROSTRUCTURE; MONOCRYSTALS; N-TYPE CONDUCTORS; OPTICAL PROPERTIES; P-TYPE CONDUCTORS; PHYSICAL RADIATION EFFECTS; SULFUR IONS; SURFACES; VISIBLE RADIATION
- Descriptors DEC
- ALLOYS; ANTIMONY COMPOUNDS; ATOMIC IONS; CHARGED PARTICLES; CRYSTAL STRUCTURE; CRYSTALS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; HEAT TREATMENTS; IONS; KEV RANGE; MATERIALS; PHASE TRANSFORMATIONS; PHYSICAL PROPERTIES; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS