Deep states in gallium-doped Pb1-xSnxTe solid solutions

Electrical properties are investigated of solid solutions Pb1-xSnxTe (x=0.02, 0.04, 0.06, 0.08) gallium-doped in quantity of 0.2 and 0.4 atom %. The Hall effect and electric conductivity are investigated in the temperature range 77-300 K. It is shown that the most low concentrations of charge carriers are obtained in samples at x=0.02 and 0.04. It is established that character of temperature dependence of electric conductivity of the solid solutions is determined mainly by composition. High-ohmic state of Pb1-xSnxTe : Ga is connected with formation of a deep level which moves in direction to valence band when tin content increasing