Published October 1972
| Version v1
Journal article
Diffusion of phosphorus and boron into silicon from doped SiO2 films
- 1. Moskovskij Inst. Ehlektronnoj Tekhniki (USSR)
Description
no abstract available
Additional details
Additional titles
- Original title (Russian)
- Диффузия фосфора и бора в кремний из легированных пленок SiO
Publishing Information
- Journal Title
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Volume
- 8
- Journal Issue
- 10
- Series
- Izv. Akad. Nauk SSSR, Neorg. Mater.
- Journal Page Range
- 1717-1721
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 4067897
- Subject category
- S37: INORGANIC, ORGANIC, PHYSICAL AND ANALYTICAL CHEMISTRY;
- Descriptors DEI
- ANNEALING; BORON ADDITIONS; CRYSTAL DOPING; DIFFUSION COATINGS; DOPED MATERIALS; ELECTRIC CONDUCTIVITY; FILMS; HYDROLYSIS; LAYERS; SILICON OXIDES; VAPOR CONDENSATION; VISCOSITY
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CHEMICAL REACTIONS; COATINGS; DECOMPOSITION; ELECTRICAL PROPERTIES; HEAT TREATMENTS; OXIDES; PHYSICAL PROPERTIES; SILICON COMPOUNDS; SOLVOLYSIS
Optional Information
- Notes
- For English translation see the journal Inorg. Mater.