Magnetoresistance properties of magnetic Ni-Mn-Sn-B shape memory ribbons and magnetic field sensor aspects operating at room temperature

In this study, the magnetotransport properties of the Ni_48.95Mn_37.74Sn_13.32B₃ ribbons prepared by melt-spinning technique were investigated in details. The martensitic-austenite phase transition was obtained between 280 K and 285 K which are near the room temperature. From ρ-H measurements, it was found that an anomalous Hall effect at 281, 283 and 285 K between M_s (martensite start temperature) and M_f (martensite finish temperature) temperatures is domianant mechanism. It was seen that a voltage variation of 5 µV (between 0 and 10 kOe) at a constant current of 1 mA is one of the best values found for the Heusler alloys. The ρ-H results revealed that the ribbons showed the magnetic field-induced one-way shape memory effect (SME). High voltage change caused by magnetoresistance was reached at a constant current of 100 mA at 298 K. The results suggest that the Ni-Mn-Sn-B ribbon is a potential candidate to prepare a magnetic field sensor operating at the room temperature.