Influence of Ar-impurities on the wettability of IBS-deposited Y2O3 thin films
- 1. RhySearch, The Rhine Valley Research and Innovation Centre, Werdenbergstr 4, CH-9471 Buchs (Switzerland)
- 2. Ion Beam Physics, ETH Zurich, CH-8093 Zurich (Switzerland)
Description
Highlights: • The hydrophobicity of IBS Y2O3 films was tested for different sputter parameters. • The residual Ar-content of the film plays a decisive role for the hydrophobicity. • Higher O to Y ratio improves the hydrophobicity. • Y2O3 terminated Y2O3:SiO2 nanolaminates are hydrophobic. The wettability and the control of the contact angle of surfaces are important for various applications. Materials with a water contact angle less than or greater than 90 deg are hydrophilic or hydrophobic, respectively. Most of the binary oxides are hydrophilic, but oxides of rare earth metals and metal atoms with low electronegativity have hydrophobic surfaces. Yttria is one of the materials predicted to have hydrophobic properties. In this work, we investigated the wettability of ion-beam-sputtered Yttria thin films. The measured water contact angles were between 67° and 96°. The concentration of the embedded argon atoms was found to influence the contact angle.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.apsusc.2021.150880Additional details
Identifiers
- DOI
- 10.1016/j.apsusc.2021.150880;
- PII
- S0169433221019395;
Publishing Information
- Journal Title
- Applied Surface Science
- Journal Volume
- 568
- Journal Page Range
- vp.
- ISSN
- 0169-4332
- CODEN
- ASUSEE
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 54078580
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- COATINGS; RARE EARTHS; SILICON OXIDES; THIN FILMS; WETTABILITY; YTTRIUM OXIDES
- Descriptors DEC
- CHALCOGENIDES; ELEMENTS; FILMS; METALS; OXIDES; OXYGEN COMPOUNDS; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; YTTRIUM COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2021 Elsevier B.V. All rights reserved.