Nonlinear currents in Voronoi networks
Creators
- 1. Department of Physics and Astronomy, The University of Tennessee, Knoxville, Tennessee 37996-1200 (United States)
- 2. Solid State Division, Oak Ridge National Laboratory, P. O. Box 2008, Oak Ridge, Tennessee 37831-6030 (United States)
Description
A realistic model of transport properties of zinc oxide ceramic varistors is constructed from two-dimensional Voronoi networks, with a varying degree of disorder, and studied via computer simulations. The relationship between the current-voltage (I-V) characteristic of a single grain boundary and the I-V characteristic of the network has been determined. It is found that the breakdown voltage of the network decreases rapidly when the disorder increases. The ratio of the breakdown voltage per grain boundary, calculated from the average grain size, to the actual single barrier voltage approaches the value observed experimentally in the limit of a fully random network. Moreover, the difference between these two voltages obtained from the simulation has been expressed as a function of the standard deviation of the average grain size and compared with experimental curves, showing a very good agreement. It has been found that in the breakdown region varistor networks with nonuniform grain structure conduct the current almost exclusively through very narrow channels (paths). This current localization effect decays when the applied voltage becomes very high and the network enters the upturn region
Additional details
Publishing Information
- Journal Title
- Physical Review. B, Condensed Matter
- Journal Volume
- 51
- Journal Issue
- 16
- Journal Page Range
- p. 10825-10832.
- ISSN
- 0163-1829
- CODEN
- PRBMDO
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 26064280
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BREAKDOWN; CERAMICS; ELECTRIC CONDUCTIVITY; GRAIN BOUNDARIES; MATHEMATICAL MODELS; NETWORK ANALYSIS; POLYCRYSTALS; RANDOMNESS; SEMICONDUCTOR RESISTORS; ZINC OXIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL STRUCTURE; CRYSTALS; ELECTRICAL EQUIPMENT; ELECTRICAL PROPERTIES; EQUIPMENT; MICROSTRUCTURE; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RESISTORS; SEMICONDUCTOR DEVICES; ZINC COMPOUNDS