Published July 28, 2008 | Version v1
Journal article

Extrinsic photonic band structure calculations of a doped semiconductor under an external magnetic field

  • 1. College of Physics, Hunan University of Science and Technology, Xiangtan 411201 (China)
  • 2. College of Physics Science and Technology, Central South University, Changsha 410082 (China)
  • 3. National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083 (China)

Description

Doped semiconductors are intrinsically homogeneous media. However, by applying an external magnetic field that has a spatially periodic variation, doped semiconductors can behave extrinsically like conventional photonic crystals. It has shown this possibility theoretically by calculating the dispersion relation, transmittance spectra, and the field distribution of a doped semiconductor under an external, spatially periodic magnetic field. The energy distribution for frequencies located in conduct band and value band are also clearly shown, which convinces the extrinsic photonic band structure characteristic

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2008.06.024

Additional details

Identifiers

DOI
10.1016/j.physleta.2008.06.024;
PII
S0375-9601(08)00867-0;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
372
Journal Issue
31
Journal Page Range
p. 5224-5228
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40046635
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CRYSTALS; DISPERSION RELATIONS; DISTRIBUTION; DOPED MATERIALS; ENERGY SPECTRA; MAGNETIC FIELDS; PERIODICITY; SEMICONDUCTOR MATERIALS; SIMULATION
Descriptors DEC
MATERIALS; SPECTRA; VARIATIONS

Optional Information

Copyright
Copyright (c) 2008 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.