Published 1986
| Version v1
Book
Enhanced disordering of AlGaAs-GaAs multiquantum well by focused Si ion beam implantation
Creators
- 1. Optoelectronics Joint Research Lab., Kawasaki (Japan)
Description
The disordering of Alsub(0.5)Gasub(0.5)As-GaAs multiquantum wells induced by focused Si ion beam implantation and subsequent annealing at 8500C under As pressure has been studied. Disordering is confirmed by depth profile of Ga Auger intensities and the scanning electron microscopy image of the cross section of multiquantum wells. Ion dose and accelerating energy dependence of disordering indicates that the Al-Ga interdiffusion is suppressed by implantation-induced-defects and enhanced by rapid diffusion of Si atoms at high concentration. (author)
Additional details
Publishing Information
- Publisher
- Adam Hilger Ltd.
- Imprint Place
- Bristol (UK)
- ISBN
- 0-85498-170-5
- Imprint Title
- Gallium arsenide and related compounds 1985
- Imprint Pagination
- 778 p.
- Journal Issue
- no. 79
- Series
- Inst. Phys., Conf. Ser.
- Journal Page Range
- p. 439-444.
Conference
- Title
- 12. international symposium on gallium arsenide and related compounds.
- Dates
- 23-26 Sep 1985.
- Place
- Karuizawa (Japan).
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 17077311
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ALUMINIUM ARSENIDES; AUGER ELECTRON SPECTROSCOPY; DEPTH; ENERGY DEPENDENCE; FOCUSING; GALLIUM ARSENIDES; ION BEAMS; ION IMPLANTATION; ORDER PARAMETERS; SCANNING ELECTRON MICROSCOPY; SILICON IONS; SPATIAL DISTRIBUTION
- Descriptors DEC
- ALUMINIUM COMPOUNDS; ARSENIC COMPOUNDS; ARSENIDES; ATOMIC IONS; BEAMS; CHARGED PARTICLES; DIMENSIONS; DISTRIBUTION; ELECTRON MICROSCOPY; ELECTRON SPECTROSCOPY; GALLIUM COMPOUNDS; IONS; MICROSCOPY; SPECTROSCOPY