Published February 1989 | Version v1
Journal article

Indium phosphide particle detectors

  • 1. Radiation Monitoring Devices, Inc., Watertown, MA (USA)

Description

Little work has been done adapting the III-IV compound indium phosphide (InP) for use in semiconducting particle detectors, although InP has been mentioned as a material of interest. This interest is due to the relatively high atomic number, large bandgap (1.35 eV), and the large electron and hole mobilities achievable in InP. It has also been pointed out that the /sup 115/In has a large cross section for solar neutrino interaction and a solar neutrino (128 keV threshold) detector could possible be built from an array of indium containing detectors. In this article, the authors report on semiconductor particle detectors fabricated from InP and tested under various conditions

Additional details

Publishing Information

Journal Title
IEEE Transactions on Nuclear Science
Journal Volume
36
Journal Issue
1
Series
IEEE Trans. Nucl. Sci.
Journal Page Range
210-212
ISSN
0018-9499
CODEN
IETNA

Conference

Title
IEEE nuclear science symposium.
Dates
9-11 Nov 1988.
Place
Orlando, FL (USA).

Optional Information

Secondary number(s)
CONF-881103--.