Effect of point defect annihilation processes on the growth of interstitial atomic clusters under electron irradiatiation of Si and Ge crystals in a high-voltage electron microscope

The kinetics of growth of interstitial atomic clusters in the form of (113) defects in Si and Ge crystals at the stationary growth stage under irradiation in a high-voltage electron microscope (HEM) is analyzed. The reactions, determining the stationary value of point defect density, are analyzed and the conclusion is made that the annihilation reaction of genetically related Frenkel pairs is dominating under conditions of high-intensity irradiation in the HEM. On the basis of comparison of the calculated and experimental growth rates of (113) defects at the stationary stage the separation coefficient for genetically related pairs is estimated as 10-3 - 10-4