First large DEPFET pixel modules for the Belle II Pixel Detector
Creators
- 1. Max-Planck-Institut fuer Physik, Muenchen (Germany)
- 2. Halbleiterlabor der Max-Planck-Gesellschaft, Muenchen (Germany)
Description
DEPFET pixel detectors offer excellent signal to noise ratio, resolution and low power consumption with a low material budget. They will be used at Belle II and are a candidate for an ILC vertex detector. The pixels are integrated in a monolithic piece of silicon which also acts as PCB providing the signal and control routings for the ASICs on top. The first prototype DEPFET sensor modules for Belle II have been produced. The modules have 192000 pixels and are equipped with SMD components and three different kinds of ASICs to control and readout the pixels. The entire readout chain has to be studied; the metal layer interconnectivity and routings need to be verified. The modules are fully characterized, and the operation voltages and control sequences of the ASICs are investigated. An overview of the DEPFET concept and first characterization results is presented.
Additional details
Identifiers
Publishing Information
- Journal Title
- Verhandlungen der Deutschen Physikalischen Gesellschaft
- Journal Issue
- Hamburg 2016 issue
- Series
- Also available as printed version: Verhandlungen der Deutschen Physikalischen Gesellschaft v. 51(2)
- Journal Page Range
- [1 p.]
- ISSN
- 0420-0195
- CODEN
- VDPEAZ
Conference
- Title
- DPG-Fruehjahrstagung 2016 (Spring meeting) of the section matter and cosmos (SMuK) together with the divisions gravity and relativity, radiation and medical physics, particle physics, theoretical and mathematical physics, and the working group philosophy of physics
- Original Conference Title
- DPG-Fruehjahrstagung 2016 der Sektion Materie und Kosmos (SMuK) gemeinsam mit den Fachverbaenden Gravitation und Relativitaetstheorie, Strahlen- und Medizinphysik, Teilchenphysik, Theoretische und Mathematische Grundlagen der Physik sowie der Arbeitsgruppe Philosophie der Physik
- Dates
- 29 Feb - 4 Mar 2016
- Place
- Hamburg (Germany)
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 48053691
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- FIELD EFFECT TRANSISTORS; INTEGRATED CIRCUITS; MODULAR STRUCTURES; POSITION SENSITIVE DETECTORS; READOUT SYSTEMS; SI SEMICONDUCTOR DETECTORS
- Descriptors DEC
- ELECTRONIC CIRCUITS; MEASURING INSTRUMENTS; MICROELECTRONIC CIRCUITS; RADIATION DETECTORS; SEMICONDUCTOR DETECTORS; SEMICONDUCTOR DEVICES; TRANSISTORS
Optional Information
- Notes
- Session: T 96.1 Do 16:45; No further information available
- Collaborations
- Belle II-Collaboration