Highly graphitized laterally interconnected SWCNT network synthesis via a sandwich-grown method
Creators
- 1. Department of Materials Science and Engineering, National Chiao Tung University, Hsinchu 30010, Taiwan (China)
- 2. Department of Electrical and Computer Engineering, University of California, Davis, CA 95616 (United States)
- 3. Department of Materials Science and Engineering, I-Shou University, Kaohsiung 84001, Taiwan (China)
- 4. Material and Chemical Research Laboratories, Industrial Technology Research Institute, Hsinchu 31040, Taiwan (China)
- 5. R and D Division, RITEK Corporation, Hsinchu 30316, Taiwan (China)
Description
We present a sandwich-grown method for growing laterally interconnected single-walled carbon nanotube (SWCNT) networks with a high degree of graphitization by microwave plasma chemical vapour deposition (MPCVD). An Al2O3-supported Fe catalyst precursor layer deposited on an oxidized Si substrate with an upper Si cover is first pretreated in pure hydrogen, and then exposed to a gas mixture of methane/hydrogen for growth process at a lower growth temperature and a faster rate. The effects of various parameters, such as catalyst film thickness, gas flow rate, working pressure, growth time and plasma power, on the morphologies and structural characteristics of the SWCNT networks are investigated, and therefore provide the essential conditions for direct growth of laterally interconnected SWCNT networks. Analytical results demonstrate that the SWCNT-based lateral architecture comprises a mixture of graphene-sheet-wrapped catalyst particles and laterally interconnected nanotubes, isolated or branched or assembled into bundles. The results also show that the formation of the laterally interconnected SWCNT networks is related to the sandwich-like stack approach and the addition of an Al2O3 layer in the MPCVD process. The successful growth of lateral SWCNT networks provides new experimental information for simply and efficiently preparing lateral SWCNTs on unpatterned substrates, and opens a pathway to create network-structured nanotube-based devices.
Availability note (English)
Available from http://dx.doi.org/10.1088/0022-3727/44/14/145401Additional details
Identifiers
- DOI
- 10.1088/0022-3727/44/14/145401;
- PII
- S0022-3727(11)66444-9;
Publishing Information
- Journal Title
- Journal of Physics. D, Applied Physics
- Journal Volume
- 44
- Journal Issue
- 14
- Journal Page Range
- [12 p.]
- ISSN
- 0022-3727
- CODEN
- JPAPBE
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43033905
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- ALUMINIUM OXIDES; CATALYSTS; CHEMICAL VAPOR DEPOSITION; FILMS; GAS FLOW; GRAPHITE; HYDROGEN; LAYERS; METHANE; MICROWAVE RADIATION; MIXTURES; MORPHOLOGY; NANOTUBES; PARTICLES; PLASMA; SUBSTRATES; SYNTHESIS; THICKNESS
- Descriptors DEC
- ALKANES; ALUMINIUM COMPOUNDS; CARBON; CHALCOGENIDES; CHEMICAL COATING; DEPOSITION; DIMENSIONS; DISPERSIONS; ELECTROMAGNETIC RADIATION; ELEMENTS; FLUID FLOW; HYDROCARBONS; MINERALS; NANOSTRUCTURES; NONMETALS; ORGANIC COMPOUNDS; OXIDES; OXYGEN COMPOUNDS; RADIATIONS; SURFACE COATING