Growth and characterization of dilute nitride GaNxP1−x nanowires and GaNxP1−x/GaNyP1−y core/shell nanowires on Si (111) by gas source molecular beam epitaxy
Creators
- 1. Graduate Program of Material Science and Engineering, University of California, San Diego, La Jolla, California 92037 (United States)
- 2. Department of Physics, University of California, San Diego, La Jolla, California 92037 (United States)
- 3. Department of Physics, Chemistry and Biology, Linköping University, 581 83 Linköping (Sweden)
- 4. Department of Materials Science and Engineering, Gwangju institute of Science and Technology (GIST), Gwangju 500-712 (Korea, Republic of)
- 5. Department of Electronic Engineering, LED-IT Fusion Technology Research Center, Yeungnam University, Daegu 712-749 (Korea, Republic of)
- 6. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92037 (United States)
Description
We have demonstrated self-catalyzed GaNxP1−x and GaNxP1−x/GaNyP1−y core/shell nanowire growth by gas-source molecular beam epitaxy. The growth window for GaNxP1−x nanowires was observed to be comparable to that of GaP nanowires (∼585 °C to ∼615 °C). Transmission electron microscopy showed a mixture of cubic zincblende phase and hexagonal wurtzite phase along the [111] growth direction in GaNxP1−x nanowires. A temperature-dependent photoluminescence (PL) study performed on GaNxP1−x/GaNyP1−y core/shell nanowires exhibited an S-shape dependence of the PL peaks. This suggests that at low temperature, the emission stems from N-related localized states below the conduction band edge in the shell, while at high temperature, the emission stems from band-to-band transition in the shell as well as recombination in the GaNxP1−x core.
Additional details
Identifiers
- DOI
- 10.1063/1.4893745;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 105
- Journal Issue
- 7
- Journal Page Range
- p. 072107-072107.5
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 46017059
- Subject category
- S77: NANOSCIENCE AND NANOTECHNOLOGY;
- Descriptors DEI
- CRYSTAL GROWTH; GALLIUM NITRIDES; GALLIUM PHOSPHIDES; MOLECULAR BEAM EPITAXY; NANOWIRES; PHOSPHORUS COMPOUNDS; PHOTOLUMINESCENCE; QUANTUM WIRES; RECOMBINATION; SILICON; SUBSTRATES; TEMPERATURE DEPENDENCE; TRANSMISSION ELECTRON MICROSCOPY; ZINC SULFIDES
- Descriptors DEC
- CHALCOGENIDES; CRYSTAL GROWTH METHODS; ELECTRON MICROSCOPY; ELEMENTS; EMISSION; EPITAXY; GALLIUM COMPOUNDS; INORGANIC PHOSPHORS; LUMINESCENCE; MICROSCOPY; NANOSTRUCTURES; NITRIDES; NITROGEN COMPOUNDS; PHOSPHIDES; PHOSPHORS; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; PNICTIDES; SEMIMETALS; SULFIDES; SULFUR COMPOUNDS; ZINC COMPOUNDS
Optional Information
- Notes
- (c) 2014 AIP Publishing LLC