Published 1975
| Version v1
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Mechanism of enhancement of controllable secondary electron emission from fast single electrons
Description
The controllable secondary electron emission (CSEE) from single 0.7/2 MeV electrons was investigated for KCL porous films with the density approximately 2% of the normal density and the thicknesses from 50 to 400μm. The average emission coefficient sigma grew with E approximately 104/105 V/cm up to the value sigma approximately 230. The internal enhancement of CSEE in the film under the action of E field is explained by Townsend type discharge in gases. The possibility of the utilization of such films in particle detectors is discussed
Availability note (English)
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Additional details
Additional titles
- Original title (Russian)
- Механизм усиления управляемой вторичной электронной эмиссии от одиночных быстрых электронов
Publishing Information
- Imprint Pagination
- 35 p.
- Report number
- EFI--131(75)
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 8348182
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- DIELECTRIC MATERIALS; ELECTRIC FIELDS; ELECTRON EMISSION; ENERGY SPECTRA; FILMS; MEAN FREE PATH; MEV RANGE 01-10; POROSITY; POTASSIUM CHLORIDES; RADIATION DETECTORS; SECONDARY EMISSION; TOWNSEND DISCHARGE
- Descriptors DEC
- ALKALI METAL COMPOUNDS; CHLORIDES; CHLORINE COMPOUNDS; ELECTRIC DISCHARGES; EMISSION; ENERGY RANGE; HALIDES; HALOGEN COMPOUNDS; MEASURING INSTRUMENTS; MEV RANGE; POTASSIUM COMPOUNDS; SPECTRA
Optional Information
- Notes
- 21 refs.; 14 figs.