Published August 15, 2006 | Version v1
Journal article

Magnetoresistance in Fe and Cu co-doped ZnO thin films

  • 1. Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang, Korea (Korea, Republic of)
  • 2. Department of Physics and Electron Spin Science Center, Pohang University of Science and Technology, Pohang, Korea (KR)
  • 3. Department of Physics and Astronomy, Michigan State University, E. Lansing, MI 48824 (United States)

Description

We examined magnetoresistance (MR) effects of Fe and Cu co-doped ZnO epitaxial films synthesized by pulsed laser deposition. The film exhibits a large positive MR at low temperatures (∼32.5% at 4T and 10K), but negative MR takes over above 40K. This crossover behavior is in contrast with the case of pure ZnO with only negative MR. The MR effects of Fe and Cu co-doped ZnO epitaxial films imply that at least two different scattering mechanisms are operating in the electrical conduction

Additional details

Identifiers

DOI
10.1016/j.physb.2006.03.042;
PII
S0921-4526(06)00732-0;

Publishing Information

Journal Title
Physica. B, Condensed Matter
Journal Volume
383
Journal Issue
1
Journal Page Range
p. 28-30
ISSN
0921-4526
CODEN
PHYBE3

Conference

Title
3. Hiroshima workshop on novel functional materials with multinary freedoms
Dates
16-19 Nov 2005
Place
Higashi-Hiroshima (Japan)

Optional Information

Copyright
Copyright (c) 2006 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.