Insight into crystal structure and Eu/Tb doped luminescence property of a new phosphate
Creators
- 1. School of Materials Science and Engineering, Central South University, Changsha, Hunan, 410083 (China)
Description
Highlights: • A new compound Mg3In4P6O24 (MIP) was confirmed with the crystal structure solved. • Eu3+/Tb3+ single-doped and co-doped MIP phosphors were synthesized. • Photoluminescence properties of the phosphors under VUV-UV excitation were investigated. • Temperature-dependence properties of the phosphor were studied. • Emission color can be adjusted by changing Eu3+/Tb3+ concentration or by altering the excitation wavelength for a very phosphor. Luminescent materials were of vital importance in the display, lighting, and biomedical fields. Exploration of novel inorganic host materials and groping for novel color-tunable phosphor materials with good thermal stability is still a major challenge for the quality-improvement of FLs and LEDs. In the present work, a new magnesium indium phosphate, Mg3In4P6O24 (MIP), was successfully synthesized by conventional high-temperature solid-state reaction and was structurally characterized by powder X-ray diffraction analysis, in which magnesium and indium atoms co-occupy four metal cation sites, coordinating with adjacent oxygen atoms forming distorted MO5 and MO6 polyhedra. The VUV-UV excited luminescence properties of a series of Eu3+/Tb3+ doped MIP phosphors were investigated, with the temperature-dependence of photoluminescence and relative mechanism analyzed. Under the excitation of 254 nm, the MIP: EuxTby phosphors can generate bright color-tunable green-yellow-red light by changing the doping concentration. In addition, the color of emission can also be adjusted by altering the excitation wavelength for a very phosphor, MIP: Eu0.01Tb0.05. As an interesting discovery, the plot of integrated dominant emission intensities of Eu and Tb in phosphor MIP: Eu0.01Tb0.05 versus excitation wavelength exhibits analogical profile with the excitation spectra of Eu3+/Tb3+ single-doped MIP phosphor. Moreover, the representative phosphor MIP: Eu0.01Tb0.05 shows favorable thermal stability. Present work indicates that Mg3In4P6O24 is a promising host material for the fabrication of new phosphors.
Availability note (English)
Available from http://dx.doi.org/10.1016/j.jallcom.2018.05.079Additional details
Identifiers
- DOI
- 10.1016/j.jallcom.2018.05.079;
- PII
- S092583881831764X;
Publishing Information
- Journal Title
- Journal of Alloys and Compounds
- Journal Volume
- 762
- Journal Page Range
- p. 444-455
- ISSN
- 0925-8388
- CODEN
- JALCEU
INIS
- Country of Publication
- Switzerland
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 53075326
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL STRUCTURE; DOPED MATERIALS; EUROPIUM IONS; EXCITATION; INDIUM PHOSPHATES; PHOSPHORS; PHOTOLUMINESCENCE; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; TERBIUM IONS; X-RAY DIFFRACTION
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; DIFFRACTION; EMISSION; ENERGY-LEVEL TRANSITIONS; INDIUM COMPOUNDS; IONS; LUMINESCENCE; MATERIALS; OXYGEN COMPOUNDS; PHOSPHATES; PHOSPHORUS COMPOUNDS; PHOTON EMISSION; SCATTERING; TEMPERATURE RANGE
Optional Information
- Copyright
- Copyright (c) 2018 Elsevier B.V. All rights reserved.