Irradiation intensity effect on the formation of radiative defects in the n-type silicon

The effect of irradiation intensity by 10 MeV electrons on the introduction rate of principle radiation defects in silicon of the n-type has been investigated. Assuming the effect of irradiation intensity on the barrier of defect complexing, the experimentally observed minimum of the introduction rate of radiation defects is due to the change in a charge state of radiation defect components. The calculation on building kinetics of the principle radiation defects with allowance for annihilation of the primary radiation defects (vacancies and interstitials) formed by irradiation confirms experimental results