Published March 1986
| Version v1
Journal article
Comparison of calculated depth distributions of implanted ions for genuine and Ge-substituted InP targets
- 1. Salford Univ. (UK). Dept. of Electrical Engineering
Description
Both MARLOWE-based computer simulation and transport theory have been used to evaluate the depth distributions of ion range and damage in InP assuming diatomic or monoatomic (Ge-substituted) targets. Results indicate that the mean depth and straggling in both distributions are higher for the diatomic target but deviations are less than 10-15% for the cases studied: N, Zn and Bi ions in the energy range of 10 - 40 keV. (author)
Additional details
Publishing Information
- Journal Title
- Philos. Mag. A
- Journal Volume
- 53
- Journal Issue
- 3
- Series
- Philos. Mag. A.
- Journal Page Range
- L49-L54
- ISSN
- 0141-8610
- CODEN
- PMAAD
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- United Kingdom
- INIS RN
- 17053002
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- BISMUTH IONS; COMPUTERIZED SIMULATION; DEPTH; GERMANIUM; INDIUM PHOSPHIDES; ION IMPLANTATION; M CODES; NITROGEN IONS; PHYSICAL RADIATION EFFECTS; SPATIAL DISTRIBUTION; TRANSPORT THEORY; ZINC IONS
- Descriptors DEC
- ATOMIC IONS; CHARGED PARTICLES; COMPUTER CODES; DIMENSIONS; DISTRIBUTION; ELEMENTS; INDIUM COMPOUNDS; IONS; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; RADIATION EFFECTS; SIMULATION