Published 1993
| Version v1
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Methodical features of selection of radiation-resistant semiconductor devices on the base of initial informative parameters
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Description
A method for evaluating the statistic interrelation of informational parameter initial values with radiation resistance of semiconducting devices using the information content factor which is invariant relative to the election scope and confidence probability is proposed
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28076651.pdf
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Additional details
Additional titles
- Original title (Russian)
- Методические особенности отбора радиационно-стойких полупроводниковых приборов по начальным информативным параметрам
Publishing Information
- Publisher
- TsNII upravleniya ehkonomiki i informatsii.
- Imprint Place
- Moscow (Russian Federation)
- Imprint Title
- Problems of nuclear science and technology. Scientific-technical collection
- Imprint Pagination
- 139 p.
- Journal Issue
- no.2-3
- Series
- Fizika radiatsionnogo vozdejstviya na radioehlektronnuyu apparaturu.
- Journal Page Range
- p. 90-95.
- Report number
- INIS-RU--430
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 28076651
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- IONIZING RADIATIONS; PHYSICAL RADIATION EFFECTS; PROBABILISTIC ESTIMATION; QUALITY CONTROL; REGRESSION ANALYSIS; SEMICONDUCTOR DEVICES
- Descriptors DEC
- CONTROL; MATHEMATICS; RADIATION EFFECTS; RADIATIONS; STATISTICS
Optional Information
- Notes
- Imprint:Voprosy atomnoj nauki i tekhniki. Nauchno-tekhnicheskij sbornik.