Effects of Ne+ and Ar+ ion bombardment on Fe/SiO2 bi-layers studied using RBS
Description
Ion beam mixing of Fe with SiO2 has been studied in details, using Rutherford backscattering spectroscopy (RBS) technique. Fe thin films of different thicknesses ranging from 23 to 49 nm were deposited on SiO2 by thermal evaporation method. Specimens were irradiated with Ne+ and Ar+ ions at different fluences (ranging from 5x1015 to 2x1017 ions/cm2) and at different temperatures (RT, 423 and 573 K). It is found that the square of diffusion length is proportional to the ion fluence implying that mixing is due to ballistic effects when irradiated with Ne+ and Ar+ ions. Long-range diffusional type of mixing similar to that observed in Fe/Si system is insignificant in case of Fe/SiO2 system. As the temperature is increased, keeping other parameters same (the ion mass, fluence and Fd), there is minor increase in the diffusion length
Additional details
Identifiers
- PII
- S0168583X00000689;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B, Beam Interactions with Materials and Atoms
- Journal Volume
- 170
- Journal Issue
- 1-2
- Journal Page Range
- p. 120-124
- ISSN
- 0168-583X
- CODEN
- NIMBEU
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 33062887
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ARGON IONS; BACKSCATTERING; ION BEAMS; IRON; LAYERS; NEON IONS; RUTHERFORD SCATTERING; SILICON OXIDES; SPECTROSCOPY; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE 0400-1000 K; THIN FILMS
- Descriptors DEC
- BEAMS; CHALCOGENIDES; CHARGED PARTICLES; ELASTIC SCATTERING; ELEMENTS; FILMS; IONS; METALS; OXIDES; OXYGEN COMPOUNDS; SCATTERING; SILICON COMPOUNDS; TEMPERATURE RANGE; TRANSITION ELEMENTS
Optional Information
- Copyright
- Copyright (c) 2000 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.