Published April 3, 1979
| Version v1
Patent
Open
Solid-state device for detecting and locating the points of impact of ionizing radiation
Creators
Description
A semiconductor body contains microscopic passages in which multiplication of the free electrons appearing at the entrances to said passages, under the effect of the incident ionizing radiation, takes place. A conductive film forms a surface barrier in conjunction with the semiconductor body which is endowed with the property of secondary emission with an emission coefficient better than unity
Availability note (English)
MF available from INIS under the Report Number.Files
11514491.pdf
Files
(267.6 kB)
| Name | Size | Download all |
|---|---|---|
|
md5:f6635a6aedb966eb3e27da1c86d8204e
|
267.6 kB | Preview Download |
Additional details
Additional titles
- Augmented title (English)
- Patent
Publishing Information
- Imprint Pagination
- 6 p.
- IPC:
- Int. Cl.G01T1/22.
- IPC
- Int. Cl.G01T1/22.
- Patent number
- US patent document 4,147,933/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 11514491
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- SPATIAL RESOLUTION; SPECIFICATIONS; SURFACE BARRIER DETECTORS
- Descriptors DEC
- MEASURING INSTRUMENTS; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS