High resolution measurements of energy spectra of protons scattered from silicon crystals in the case of planar channelling

Abstract The energy spectrum of backscattered protons in the case of incidence along several planar directions shows a fine structure near the high-energy edge. This structure, an oscillatory dependence of the probability of backscattering vs. depth in the crystal, offers a possibility to study the proton trajectory in the lattice and also to obtain the stopping power of protons near planes in silicon. Application of a simple model for the proton trajectory yields a stopping power near the planes 4 to 5 times higher than for random incidence. These effects have been observed using primary energies in the range 40–140 keV and for incidence along (110). (111), (100) and (112) planes.