Published April 1993
| Version v1
Journal article
Dependence of electron-excited conductivity of thin amorphous gallium phosphide films on bombarding electron energy and electron penetration depth in them
Description
This note contains some experimental results and an analysis of the bombarding electron energy of electron-excited conductivity and variation in electron penetration depth in sandwich structures based on GaP films of thickness 0,1 to 0,6 μm. (author). 7 refs., 2 figs
Additional details
Additional titles
- Original title (Russian)
- Зависимост' электронно-возбужденной проводимости от энергии бомбардирующих элеcтронов и глубина их проникновения в тонких аморфных пленках фосфида галлия
Publishing Information
- Journal Title
- Uzbekiston Respublikasi Fanlar Akademiyasining Maruzalari
- Journal Volume
- 1
- Journal Page Range
- p. 22-24.
- ISSN
- 1019-8954
- CODEN
- DARUEE
INIS
- Country of Publication
- Uzbekistan
- Country of Input or Organization
- Uzbekistan
- INIS RN
- 27030570
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ELECTRIC CONDUCTIVITY; ELECTRON BEAMS; GALLIUM PHOSPHIDES; KEV RANGE; LAMELLAE; PENETRATION DEPTH; PHYSICAL RADIATION EFFECTS; THICKNESS; THIN FILMS
- Descriptors DEC
- BEAMS; DIMENSIONS; ELECTRICAL PROPERTIES; ENERGY RANGE; FILMS; GALLIUM COMPOUNDS; LEPTON BEAMS; PARTICLE BEAMS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; RADIATION EFFECTS