Published 1992
| Version v1
Miscellaneous
Electron mechanism model of ion-stimulated crystallization in silicon
Creators
Description
Short communication. 1 refs
Additional details
Additional titles
- Original title (Russian)
- Модел' электронного механизма ионно-стимулированной кристаллизации в кремнии
Publishing Information
- Imprint Title
- Summaries of reports of the 22. conference on physics of charged particle interaction with crystals
- Imprint Pagination
- 135 p.
- Journal Page Range
- p. 96.
- Report number
- INIS-SU--340/A
Conference
- Title
- 22. Conference on physics of charged particle interaction with crystals.
- Original Conference Title
- 22. Soveshchanie po fizike vzaimodejstviya zaryazhennykh chastits s kristallami
- Dates
- 25-27 May 1992.
- Place
- Moscow (Russian Federation).
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24035009
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, No Abstract
- Descriptors DEI
- AMORPHOUS STATE; CRYSTALLIZATION; CRYSTALS; ION IMPLANTATION; SILICON; SURFACES
- Descriptors DEC
- ELEMENTS; PHASE TRANSFORMATIONS; SEMIMETALS
Optional Information
- Notes
- Imprint:Tezisy dokladov 22. Soveshchaniya po fizike vzaimodejstviya zaryazhennykh chastits s kristallami.