Published January 2004
| Version v1
Journal article
The effect of heating on InGaAs/InP(1 0 0) and InPO4/InP(1 0 0)
Description
We have used Auger and electron energy loss spectroscopy to study the effect of temperature on InGaAs and InPO4 grown on InP. The thickness of InPO4 is of about 10 A whereas that of InGaAs is of about 800 A. InPO4 is of great interest because it protects InP from loss of stoichiometry when heated to 450 deg. C. The InGaAs system heated at 450 deg. C seems to be unstable; metallic indium appears on the surface in conjunction with formation of GaAs
Additional details
Identifiers
- DOI
- 10.1016/j.elspec.2003.10.001;
- PII
- S0368204803001774;
Publishing Information
- Journal Title
- Journal of Electron Spectroscopy and Related Phenomena
- Journal Volume
- 134
- Journal Issue
- 1
- Journal Page Range
- p. 81-85
- ISSN
- 0368-2048
- CODEN
- JESRAW
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 35040921
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- AUGER ELECTRON SPECTROSCOPY; ENERGY-LOSS SPECTROSCOPY; GALLIUM ARSENIDES; INDIUM ARSENIDES; INDIUM PHOSPHATES; INDIUM PHOSPHIDES; PHASE STABILITY; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; ELECTRON SPECTROSCOPY; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; OXYGEN COMPOUNDS; PHOSPHATES; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; SPECTROSCOPY; STABILITY
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.