Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation
- 1. College of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 (China)
- 2. State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 (China)
Description
A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally. (physics of gases, plasmas, and electric discharges)
Availability note (English)
Available from http://dx.doi.org/10.1088/0256-307X/27/7/075201Additional details
Identifiers
Publishing Information
- Journal Title
- Chinese Physics Letters
- Journal Volume
- 27
- Journal Issue
- 7
- Journal Page Range
- [4 p.]
- ISSN
- 0256-307X
- CODEN
- CPLEEU
INIS
- Country of Publication
- China
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 45003019
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Descriptors DEI
- APERTURES; COMPUTERIZED SIMULATION; DIRECT CURRENT; ELECTRIC FIELDS; ION IMPLANTATION; IONS; PLASMA; PLASMA EXPANSION; PLASMA POTENTIAL; PLASMA SIMULATION; SHADOW EFFECT
- Descriptors DEC
- CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EXPANSION; OPENINGS; SIMULATION