Published July 2010 | Version v1
Journal article

Non-Uniformity of Ion Implantation in Direct-Current Plasma Immersion Ion Implantation

  • 1. College of Physics and Electronic Technology, Liaoning Normal University, Dalian 116029 (China)
  • 2. State Key Laboratory for Materials Modification by Laser, Ion and Electron Beams, School of Physics and Optoelectronic Technology, Dalian University of Technology, Dalian 116023 (China)

Description

A particle-in-cell simulation is developed to study dc plasma immersion ion implantation. Particular attention is paid to the influence of the voltage applied to the target on the ion path, and the ion flux distribution on the target surface. It is found that the potential near the aperture within the plasma region is not the plasma potential, and is impacted by the voltage applied to the implanted target. A curved equipotential contour expands into the plasma region through the aperture and the extent of the expansion depends on the voltage. Ions accelerated by the electric field in the sheath form a beam shape and a flux distribution on the target surface, which are strongly dependent on the applied voltage. The results of the simulations demonstrate the formation mechanism of the grid-shadow effect, which is in agreement with the result observed experimentally. (physics of gases, plasmas, and electric discharges)

Availability note (English)

Available from http://dx.doi.org/10.1088/0256-307X/27/7/075201

Additional details

Publishing Information

Journal Title
Chinese Physics Letters
Journal Volume
27
Journal Issue
7
Journal Page Range
[4 p.]
ISSN
0256-307X
CODEN
CPLEEU

INIS

Country of Publication
China
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
45003019
Subject category
S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
Descriptors DEI
APERTURES; COMPUTERIZED SIMULATION; DIRECT CURRENT; ELECTRIC FIELDS; ION IMPLANTATION; IONS; PLASMA; PLASMA EXPANSION; PLASMA POTENTIAL; PLASMA SIMULATION; SHADOW EFFECT
Descriptors DEC
CHARGED PARTICLES; CURRENTS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; EXPANSION; OPENINGS; SIMULATION