Effect of uniaxial deformation on the recombination of nonequilibrium carriers in gamma irradiated silicon

Using uniaxial loading recombination of nonequilibrium charge carriers in Si grown by the Czokhralski method and 60Co γ-quantum irradiated is studied. In the 300-80 K range relaxation of nonequilibrium conductivity at a low excitation level was defined by electron trapping centres at the Esub(c)-0.18 and Esub(c)-0.10 eV levels in p-Si and holes at the Esub(v)+0.25 and Esub(v)+0.08 eV in n-Si. The dependences of the lifetime on temperature and uniaxial loading are explained with regard to multicharge of the levels of separate radiation defects, variation of their ionization energy and their splitting