Simulating 1.30 µm Optical Gain in Type-I InGaAsN/GaAs Nano-Heterostructure

This paper reports theoretical simulation of optical gain achieved at 1.30 µm in the type-I InGaAsN/GaAs nano-scale heterostructure having active region of width ∼ 40 Å. In addition, the modal gain, behaviour of differential gain and anti-guiding factor of the heterostructure is also simulated and reported. From simulation results, it is concluded that the proposed InGaAsN/GaAs heterostructure can produce the maximum optical gain ∼2100/cm at 1.30 µm. (paper)