Published May 15, 2001 | Version v1
Journal article Metadata-only

Production and stability of implanted Pd-Si hydride

Creators

  • 1. Paris-11 Univ., 91 - Orsay (France). Centre de Spectrometrie Nucleaire et de Spectrometrie de Masse

Description

Combining in situ Rutherford backscattering and electrical transport measurements on low-temperature hydrogen-implanted amorphous Pd80Si20 films, we have studied the correlation between the hydrogen content and the resistivity. (orig.)

Additional details

Publishing Information

Journal Title
Nucl. Instrum. Methods Phys. Res.
Journal Volume
209/210
Journal Issue
pt.1
Series
Nucl. Instrum. Methods Phys. Res.
Journal Page Range
313-315
ISSN
0029-554X

Conference

Title
3. international conference on ion beam modification of materials.
Dates
6-10 Sep 1982.
Place
Grenoble (France).

INIS

Country of Publication
Netherlands
Country of Input or Organization
Netherlands
INIS RN
15000299
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
ANNEALING; BACKSCATTERING; DESORPTION; ELECTRIC CONDUCTIVITY; EXPERIMENTAL DATA; FILMS; HYDRIDES; HYDROGEN IONS 1 PLUS; ION IMPLANTATION; LOW TEMPERATURE; PALLADIUM ALLOYS; RUTHERFORD SCATTERING; SILICON ALLOYS; ULTRALOW TEMPERATURE; VERY LOW TEMPERATURE
Descriptors DEC
ALLOYS; CATIONS; CHARGED PARTICLES; DATA; ELASTIC SCATTERING; ELECTRICAL PROPERTIES; HEAT TREATMENTS; HYDROGEN COMPOUNDS; HYDROGEN IONS; INFORMATION; IONS; NUMERICAL DATA; PHYSICAL PROPERTIES; SCATTERING