Carrier mobility in manganese-doped cadmium telluride

The effect of Mn additions on scattering of charge carriers in CdTe has been investigated. Temperature dependence of the Hall electron mobility in CdTe monocrystals alloyed with manganese in the 77-435 K temperature range is studied. It is obtained that non-alloying of CdTe with manganese results in essential decrease of charge carrier mobility especially in the low temperature range (approximately 50 K). Relative contribution of scattering on magnetic additions to mobility makes up approximately 10-15% in the high temperature range. At low temperatures the mentioned contribution constitutes approximately 50%. ELectron mobility increased in CdTe-Mn with temperature decrease and it approached the maximal value at T=110 K. It is noted that the investigated CdTe-Mn samples have good reproductivity of electrophysical properties in the investigated temperature range