Study of a new method for determination of parameters of trapping levels limiting injection currents in semiconductors

A theoretical estimate of the resolution power and accuracy of a new method for determining the parameters of attachment levels limiting the passage of injection currents in semiconductors was made. The method was tested experimentally on polycrystalline layers of high-resistance CdS. It was established that the method ensures a high sensitivity and accuracy even in the presence of high-field processes accompanying monopolar injection