On the dependence of annealing temperature of impurity atom-vacancy defects on the type of impurity

An attempt is made to explain temperature dependences of annealing the complexes, which create loosening orbitals, on the type of impurity for isovalency series in germanium and silicon, as well as on the impurity concentration. It is shown that in this case the more the complex level is remoted from conductivity zone bottom, the lower is the temperatures at which the annealing takes place, since a probability of neighbouring regular atom jump over to the vacancy increases with an increase in the energy gap