Published May 2006
| Version v1
Journal article
Transverse Kerr effect in one-dimensional magnetophotonic crystals: Experiment and theory
Creators
- 1. Faculty of Physics, Lomonosov Moscow State University, 11992 Moscow (Russian Federation)
- 2. Institute for Theoretical and Applied Electrodynamics, Izhorskaya 13/19, 127412 Moscow (Russian Federation)
- 3. Department of Electrical and Electronic Engineering, Toyohashi University of Technology, 1-1 Hibari-Ga-Oka, Tempaku, Toyohashi 441-8580 (Japan)
Description
Magneto-optical transverse Kerr and Faraday effects are studied experimentally and theoretically in one-dimensional magnetophotonic crystals fabricated from a stack of four repetitions of layers of Bi-substituted yttrium iron garnet and SiO2 layers. The results of theoretical calculations in the framework of modified matrices approach are consistent with the obtained experimental data with the exception of the one cusp at 480 nm in the transverse Kerr effect spectra. Possible mechanisms of this disagreement are discussed
Additional details
Identifiers
- DOI
- 10.1016/j.jmmm.2005.10.094;
- PII
- S0304-8853(05)00922-4;
Publishing Information
- Journal Title
- Journal of Magnetism and Magnetic Materials
- Journal Volume
- 300
- Journal Issue
- 1
- Journal Page Range
- p. e257-e259
- ISSN
- 0304-8853
- CODEN
- JMMMDC
Conference
- Title
- 3. Moscow international symposium on magnetism 2005
- Dates
- 26-30 Jun 2005
- Place
- Moscow (Russian Federation)
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37103971
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; FERRITE GARNETS; IRON COMPOUNDS; KERR EFFECT; LAYERS; MATRICES; SILICON OXIDES; SPUTTERING; YTTRIUM COMPOUNDS
- Descriptors DEC
- CHALCOGENIDES; DATA; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; INFORMATION; MINERALS; NUMERICAL DATA; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SILICON COMPOUNDS; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.