Critical fields of multilayered films of Al and Ge
Creators
- 1. Department of Materials Science and Engineering, Cornell University, Ithaca, New York 14853
Description
Films consisting of multiple alternating layers of Al and Ge were fabricated with variable layer spacing, and the superconducting properties measured as a function of the layer spacing. The critical temperatures followed the theory of Garland as formulated by Petitt and Silcox with β = 0.26 and k = 20 A. The critical fields parallel to the layers varied as (1 - t)/sup 1/2/ with extrapolated zero-temperature values similar to a single film with the thickness of one Al layer. The critical fields perpendicular to the layers showed a marked positive curvature with respect to temperature at high reduced temperatures. These findings are discussed. A theory by Gray and Schuller can be used to predict quite accurately the grain size in the layers from the degree of positive curvature, but this theory does not account for the lack of positive curvature in parallel fields
Additional details
Publishing Information
- Journal Title
- Phys. Rev., B
- Journal Volume
- 18
- Journal Issue
- 5
- Series
- Phys. Rev., B.
- Journal Page Range
- 2225-2236
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 10429736
- Subject category
- S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM; CRITICAL FIELD; FILMS; GERMANIUM; GRAIN SIZE; LAYERS; SUPERCONDUCTIVITY; TRANSITION TEMPERATURE
- Descriptors DEC
- CRYSTAL STRUCTURE; ELECTRIC CONDUCTIVITY; ELECTRICAL PROPERTIES; ELEMENTS; MAGNETIC FIELDS; METALS; MICROSTRUCTURE; PHYSICAL PROPERTIES; SIZE; THERMODYNAMIC PROPERTIES