Published May 2004
| Version v1
Journal article
Stark widths of faint Si-II lines
Creators
- 1. Observatoire de Meudon, GEPI-UMR 8111 92 (France)
- 2. Toulon Univ., Lab. d'Optique Appliquee, 83 - La Garde (France)
Description
Line profiles of faint Si-II lines of astrophysical interest are observed in a conventional shock tube. Electron density is 1.3 x 1023 m-3, and the temperature is 11.000 K. The Stark effect is the dominant broadening mechanism. The Si-II line at 419.07 nm (multiplet 7.26, Moore 1965) Stark width is measured and compared with theoretical prediction. (authors)
Availability note (English)
Available from doi:Additional details
Identifiers
Publishing Information
- Journal Title
- Astronomy and Astrophysics
- Journal Volume
- 418
- Journal Issue
- no.2
- Journal Page Range
- p. 765-769
- ISSN
- 0004-6361
- CODEN
- AAEJAF
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 35061299
- Subject category
- S74: ATOMIC AND MOLECULAR PHYSICS;
- Descriptors DEI
- ENERGY-LEVEL TRANSITIONS; LINE BROADENING; PLASMA; SILICON IONS; STARK EFFECT; TEMPERATURE RANGE OVER 4000 K
- Descriptors DEC
- CHARGED PARTICLES; IONS; TEMPERATURE RANGE
Optional Information
- Notes
- 25 refs.