Published June 1988
| Version v1
Journal article
Spin splitting in A4B6 type semimagnetic semiconductors
Description
Spin splittings of electron states in A4B6 type semimagnetic semiconductors are calculated proceeding from the p-model of the electron spectrum of A4B6 binary semiconductors in the approximation of the mean field. The results of the calculation are applied for experimental data analysis by absorption and luminescence spectra in a magnetic field. Mn implantation results in large increase of hole g-factors. Parameters of exchange interaction are determined for PbMnTe
Additional details
Additional titles
- Original title (Russian)
- Спиновое расщепление в полумагнитных полупроводниках типа А
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 30
- Journal Issue
- 6
- Series
- Fiz. Tverd. Tela.
- Journal Page Range
- 1669-1674
- ISSN
- 0367-3294
- CODEN
- FTVTA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 20009661
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABSORPTION SPECTRA; BRILLOUIN ZONES; ELECTRONIC STRUCTURE; ENERGY-LEVEL TRANSITIONS; EPITAXY; EXCHANGE INTERACTIONS; GYROMAGNETIC RATIO; HAMILTONIANS; LAYERS; LEAD TELLURIDES; LUMINESCENCE; MAGNETIC FIELDS; MANGANESE TELLURIDES; ORIENTATION; QUANTITY RATIO; SOLID SOLUTIONS; WAVE FUNCTIONS
- Descriptors DEC
- CHALCOGENIDES; DISPERSIONS; EMISSION; FUNCTIONS; HOMOGENEOUS MIXTURES; INTERACTIONS; LEAD COMPOUNDS; MANGANESE COMPOUNDS; MATHEMATICAL OPERATORS; MIXTURES; PHOTON EMISSION; QUANTUM OPERATORS; SOLUTIONS; SPECTRA; TELLURIDES; TELLURIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZONES