Published August 5, 2013
| Version v1
Journal article
Theory of Defect-Induced Kondo Effect in Graphene: Effect of Zeeman Field
Creators
- 1. Department of Physics, the University of Tokyo, Bunkyo, Tokyo 113-0033 (Japan)
Description
The effect of the Zeeman field on the defect-induced Kondo effect in graphene is investigated. The effective model of the Kondo effect is derived, and is analyzed on the basis of the numerical renormalization group method. It is found that, under the Zeeman field, at the border of the spin polarized state and the Kondo-Yosida singlet state, there is an unusual fixed point where the entropy of the defect is kB ln 2 and the expectation value of S2z is 1/8
Availability note (English)
Available from http://dx.doi.org/10.1088/1742-6596/456/1/012018Additional details
Identifiers
Publishing Information
- Journal Title
- Journal of Physics. Conference Series (Online)
- Journal Volume
- 456
- Journal Issue
- 1
- Journal Page Range
- [5 p.]
- ISSN
- 1742-6596
Conference
- Title
- 20. international conference on the application of high magnetic fields in semiconductor physics
- Acronym
- HMF-20
- Dates
- 22-27 Jul 2012
- Place
- Chamonix (France)
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 44106762
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ENTROPY; EXPECTATION VALUE; GRAPHENE; KONDO EFFECT; RENORMALIZATION; SPIN ORIENTATION; ZEEMAN EFFECT
- Descriptors DEC
- CARBON; ELEMENTS; NONMETALS; ORIENTATION; PHYSICAL PROPERTIES; THERMODYNAMIC PROPERTIES