Published April 1, 2001
| Version v1
Journal article
Correction of dopant concentration fluctuation effects in silicon drift detectors
Description
Dopant fluctuations in silicon wafers are responsible for systematic errors in the determination of the particle crossing point in silicon drift detectors. In this paper, we report on the first large-scale measurement of this effect by means of a particle beam. A significant improvement of the anodic resolution has been obtained by correcting for these systematic deviations
Additional details
Identifiers
- PII
- S0168900200012146;
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section A, Accelerators, Spectrometers, Detectors and Associated Equipment
- Journal Volume
- 461
- Journal Issue
- 1-3
- Journal Page Range
- p. 222-225
- ISSN
- 0168-9002
- CODEN
- NIMAER
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Germany
- INIS RN
- 34008609
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ANODES; CORRECTIONS; DOPED MATERIALS; FLUCTUATIONS; PARTICLE TRACKS; POSITION SENSITIVE DETECTORS; SI SEMICONDUCTOR DETECTORS; SILICON; SPATIAL DISTRIBUTION; SPATIAL RESOLUTION
- Descriptors DEC
- DISTRIBUTION; ELECTRODES; ELEMENTS; MATERIALS; MEASURING INSTRUMENTS; RADIATION DETECTORS; RESOLUTION; SEMICONDUCTOR DETECTORS; SEMIMETALS; VARIATIONS
Optional Information
- Copyright
- Copyright (c) 2001 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.