Deposition of GaAs thin films from ablation plasma produced by high impulse ion beam

In this paper reported the results investigation of thin films by ablation plasma produced high impulse phase ion beam on GaAs target. Thin films deposited on plate Si (100). Thickness of film for one impulse averages 3-5 nm, whole thickness investigation of forming film averaged 200-500 nm. Composition and structure of films were investigated by methods of X-ray diffraction, Rutherford backscattering, atomic force microscopy and scanning electron microscopy defined surface morphology of thin film GaAs. (authors)