Published March 27, 2013 | Version v1
Journal article

Metal–insulator transition in SrIrO3 with strong spin–orbit interaction

  • 1. National Laboratory of Solid State Microstructures and Department of Materials Science and Engineering, Nanjing University, Nanjing 210093 (China)
  • 2. National Laboratory of Solid State Microstructures and Department of Physics, Nanjing University, Nanjing 210093 (China)

Description

The thickness-dependent metal–insulator transition is observed in meta-stable orthorhombic SrIrO3 thin films synthesized by pulsed laser deposition. SrIrO3 films with thicknesses less than 3 nm demonstrate insulating behaviour, whereas those thicker than 4 nm exhibit metallic conductivity at high temperature, and insulating-like behaviour at low temperature. Weak/Anderson localization is mainly responsible for the observed thickness-dependent metal–insulator transition in SrIrO3 films. Temperature-dependent resistance fitting shows that electrical-conductivity carriers are mainly scattered by the electron–boson interaction rather than the electron–electron interaction. Analysis of the magneto-conductance proves that the spin–orbit interaction plays a crucial role in the magneto-conductance property of SrIrO3. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/25/12/125604

Additional details

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
25
Journal Issue
12
Journal Page Range
[8 p.]
ISSN
0953-8984
CODEN
JCOMEL