Controlled interference effects of spatial reproduction and multiplication for electron waves in semiconductor 2D nanostructures

Effects of spatial reproduction and multiplication for the probability current density jx(x, z) (or a quantum-mechanical current density ejx(x, z), e is the electron charge) in the symmetric semiconductor 2D nanostructures in the form of joints in the direction of propagation of the electron wave (the x-axis) of narrow and wide (on the z-axis) rectangular quantum wells (QWs) (z-axis is the axis of the quantization) and the possibility to control these effects by the transverse (along z-axis) constant electric field strength F in the wide QW have been theoretically studied. The possibility to control these effects by the transverse constant electric field being created by gates in the wide QW was studied theoretically. Decrease of the effective width of the wide QW and the disappear of its symmetry in the electric field result to the change of spatial distribution of the jx(x, z) and the possibility of the inverse population of quantum subbands in the wide QW