Published 1996
| Version v1
Miscellaneous
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Photonuclear transmutational doping of silicon monocrystals by aluminium
Creators
- 1. Natsional'nyj Nauchnyj Tsentr, Kharkov (Ukraine). Khar'kovskij Fiziko-Tekhnicheskij Inst.
Description
Short communications
Files
28063471.pdf
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Additional details
Additional titles
- Original title (Russian)
- Фотоядерное трансмутационное легирование монокристаллов кремния алюминием
Publishing Information
- Imprint Title
- Physics of radiation damage and radiation materials technology
- Imprint Pagination
- 112 p.
- Journal Volume
- 1
- Journal Issue
- 64
- Series
- Voprosy atomnoj nauki i tekhniki. Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.
- Journal Page Range
- p. 58-59.
- ISSN
- 0134-5400
- Report number
- INIS-UA--031
INIS
- Country of Publication
- Ukraine
- Country of Input or Organization
- Ukraine
- INIS RN
- 28063471
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- ALUMINIUM ADDITIONS; CRYSTAL DOPING; GAMMA RADIATION; MONOCRYSTALS; N-TYPE CONDUCTORS; PHOTONUCLEAR REACTIONS; PHYSICAL RADIATION EFFECTS; SILICON; TRANSMUTATION
- Descriptors DEC
- CRYSTALS; ELECTROMAGNETIC RADIATION; ELEMENTS; IONIZING RADIATIONS; MATERIALS; NUCLEAR REACTIONS; RADIATION EFFECTS; RADIATIONS; SEMICONDUCTOR MATERIALS; SEMIMETALS
Optional Information
- Notes
- Imprint:Fizika radiatsionnykh povrezhdenij i radiatsionnoe materialovedenie.