Published October 26, 2009
| Version v1
Journal article
Mg doping and its effect on the semipolar GaN(1122) growth kinetics
Creators
- 1. Equipe mixte CEA-CNRS 'Nanophysique et Semiconducteurs', CEA-Grenoble, INAC/SP2M/NPSC, 17 rue des Martyrs, 38054 Grenoble (France)
- 2. Institut NEEL, CNRS and Universite Joseph Fourier, BP166, 38042 Grenoble Cedex 9 (France)
- 3. CIMAP, UMR6252, CNRS-ENSICAEN-CEA-UCBN, 6 Boulevard du Marechal Juin, 14050 Caen (France)
- 4. I. Physikalisches Institut, Justus-Liebig-Universitaet Giessen, 35392 Giessen (Germany)
Description
We report the effect of Mg doping on the growth kinetics of semipolar GaN(1122) synthesized by plasma-assisted molecular-beam epitaxy. Mg tends to segregate on the surface, inhibiting the formation of the self-regulated Ga film which is used as a surfactant for the growth of undoped and Si-doped GaN(1122). We observe an enhancement of Mg incorporation in GaN(1122) compared to GaN(0001). Typical structural defects or polarity inversion domains found in Mg-doped GaN(0001) were not observed for the semipolar films investigated in the present study.
Additional details
Identifiers
- DOI
- 10.1063/1.3256189;
Publishing Information
- Journal Title
- Applied Physics Letters
- Journal Volume
- 95
- Journal Issue
- 17
- Journal Page Range
- p. 171908-171908.3
- ISSN
- 0003-6951
- CODEN
- APPLAB
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 41040437
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- CRYSTAL GROWTH; DOPED MATERIALS; GALLIUM NITRIDES; MAGNESIUM; MOLECULAR BEAM EPITAXY; SEGREGATION; SEMICONDUCTOR MATERIALS; SURFACTANTS; THIN FILMS
- Descriptors DEC
- ALKALINE EARTH METALS; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; FILMS; GALLIUM COMPOUNDS; MATERIALS; METALS; NITRIDES; NITROGEN COMPOUNDS; PNICTIDES
Optional Information
- Notes
- (c) 2009 American Institute of Physics