Published April 3, 2006
| Version v1
Journal article
Effect of inorganic nanolayers on electron injection in polymer light-emitting diodes
Creators
- 1. Institute of Optoelectronics, Northern Jiaotong University, Beijing 100044 (China) and ShenYang University of Technology, ShenYang 130021 (China)
- 2. Institute of Optoelectronics, Northern Jiaotong University, Beijing 100044 (China)
- 3. Postdoctoral Working Station of Zhong-Huan San-Jin Ltd., Tianjin 300191 (China)
Description
We report the effect of inorganic nanolayers on electron injection in the polymer light-emitting diodes (PLEDs) in which a hole is the major charge carrier. The inorganic nanolayers with different dielectric constants were placed between the emitting layer and the aluminum cathode, and their influence on the device performance was investigated. The device with a nanolayer of lower dielectric constant demonstrated higher efficiency, which is significantly higher than that of one without an insulating layer. The enhancement may result from the lowering of the effective barrier height for electron injection while increasing electron-tunneling probability, which improve the balanced injection of hole and electrons
Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2005.11.078;
- PII
- S0375-9601(05)01860-8;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 352
- Journal Issue
- 4-5
- Journal Page Range
- p. 434-437
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 37068710
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
- Descriptors DEI
- ALUMINIUM; CATHODES; CHARGE CARRIERS; EFFICIENCY; ELECTRON BEAM INJECTION; HOLES; LAYERS; LIGHT EMITTING DIODES; NANOSTRUCTURES; PERFORMANCE; PERMITTIVITY; POLYMERS; PROBABILITY; TUNNEL EFFECT
- Descriptors DEC
- BEAM INJECTION; DIELECTRIC PROPERTIES; ELECTRICAL PROPERTIES; ELECTRODES; ELEMENTS; METALS; PHYSICAL PROPERTIES; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES
Optional Information
- Copyright
- Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.