Published November 2014 | Version v1
Journal article Metadata-only

Diffraction limited 3.15 μm cascade diode lasers

Creators

  • 1. Department of ECE, Stony Brook University, Stony Brook, NY 11794 (United States)
  • 2. Center for Functional Nanomaterials, Brookhaven National Laboratory, Upton, NY 11973 (United States)

Description

Cascade GaSb-based type-I quantum well diode lasers emitting near 3.15 μm were designed and fabricated. The efficient carrier recycling between stages was confirmed by twofold increase of the efficiency of two-stage cascade laser as compared to reference single-stage devices. Narrow ridge cascade lasers generated more than 40 mW of continuous-wave output power in diffraction limited beam at room temperature. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/29/11/115016

Additional details

Identifiers

DOI
10.1088/0268-1242/29/11/115016;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
29
Journal Issue
11
Journal Page Range
[6 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
46082658
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
CHARGE CARRIERS; COMPARATIVE EVALUATIONS; DIFFRACTION; EFFICIENCY; GALLIUM ANTIMONIDES; LASER RADIATION; LASERS; QUANTUM WELLS; TEMPERATURE RANGE 0273-0400 K
Descriptors DEC
ANTIMONIDES; ANTIMONY COMPOUNDS; COHERENT SCATTERING; ELECTROMAGNETIC RADIATION; EVALUATION; GALLIUM COMPOUNDS; NANOSTRUCTURES; PNICTIDES; RADIATIONS; SCATTERING; TEMPERATURE RANGE